| PART |
Description |
Maker |
| MMBD452LT1G |
Dual Hot−Carrier Diodes Schottky Barrier Diodes SILICON, LOW BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE, TO-236AB
|
ON Semiconductor
|
| BAT721 1PS76SB21 1PS76SB21-15-15 BAT721C BAT721S B |
Planar Schottky barrier diodes with an integrated guard ring for stress protection. Encapsulated in small Surface-Mounted Device (SMD) plastic packages.
Schottky barrier diodes in small packages
|
NXP Semiconductors
|
| MA2YD23 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| MA745 MA3J745 MA3J745MA745 |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| MA3Z792E MA3Z792D MA3Z792DMA792WA MA792WA MA792WK |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
Matsshita / Panasonic
|
| HSB88WA |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| CDBER0130R-HF CDBER130R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.1A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAS40-04 BAS40-04LT1G BAS40-04LT1 BAS40-04L |
Dual Series Schottky Barrier Diode
SCHOTTKY BARRIER DIODES
|
ONSEMI[ON Semiconductor]
|
| BAT754 BAT754A BAT754C BAT754S BAT754_SERIES_1 BAT |
From old datasheet system
Schottky barrier double diodes
Schottky barrier (double) diodes
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
